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MFG:Infineon Technologies (VA)  Category:Discrete Semiconductor Products  

BSP123L6327

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Part Number: BSP123L6327

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

 

 

Descriptions: MOSFET N-CH 100V 370MA SOT223

Price Break

1
10
100
1000

Unit Price

.64000
.46500
.37460
.23835

Extended Price

0.64
4.65
37.46
238.35

(All prices are in USD) Prices for reference only
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BSP123L6327 General Description

MOSFET N-CH 100V 370MA SOT223

BSP123L6327 Parameters

Technical/Catalog InformationBSP123L6327
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C370mA
Rds On (Max) @ Id, Vgs6 Ohm @ 370mA, 10V
Input Capacitance (Ciss) @ Vds 70pF @ 25V
Power - Max1.79W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs2.4nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSP123L6327
BSP123L6327
BSP123INCT ND
BSP123INCTND
BSP123INCT

BSP123L6327 datasheet

BSP030
PDF/DataSheet Download

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    N-channel enhancement mode vertical D-MOS transistor BSP120 in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.

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