BSP126,115

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 0.375 A


Parameters:

Technical/Catalog Information	BSP126,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	375mA
Rds On (Max) @ Id, Vgs	5 Ohm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Depletion Mode
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSP126,115 BSP126,115