MFG:Infineon Technologies Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Descriptions: MOSFET N-CH 240V 350MA SOT223
| Technical/Catalog Information | BSP129E6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25° C | 350mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 350mA, 10V |
| Input Capacitance (Ciss) @ Vds | 108pF @ 25V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 5.7nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Depletion Mode |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSP129E6327 BSP129E6327 BSP129INTR ND BSP129INTRND BSP129INTR |
BSP030
PDF/DataSheet Download
N-channel enhancement mode vertical D-MOS transistor BSP128 in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP127 in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
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MOSFET N-CH 250V 375MA SOT223
MOSFET N-CH 250V 375MA SOT223
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