MFG:PHILIPS Package Cooled:SOT223 D/C:09+
MFG: PHILIPS
Package Cooled: SOT223
D/C: 09+
Description: N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line ...
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage |
300 |
V | ||
|
±VGSO |
gate-source voltage |
open drain |
±20 |
V | |
|
ID |
DC drain current |
300 |
mA | ||
|
IDM |
peak drain current |
1.4 |
A | ||
|
Ptot |
total power dissipation |
up to Tamb = 25 °C; note 1 |
1.5 |
W | |
|
Tstg |
storage temperature |
-65 |
+150 |
°C | |
|
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
BSP130
PDF/DataSheet Download
MOSFET N-CH 240V 350MA SOT223
MOSFET N-CH 240V 350MA SOT223
N-channel enhancement mode vertical D-MOS transistor BSP128 in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP127 in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
SOT223-1.jpg)
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