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BSP130

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 300 V ±VGSO gate-source voltage open drain ±20 V ID...

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SeekIC No. : 004302292 Detail

BSP130: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source...

BSP130 Data Sheet

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Part Number:
BSP130
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
300
V
±VGSO
gate-source voltage
open drain
±20
V
ID
DC drain current
300
mA
IDM
peak drain current
1.4
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1.5
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
150
°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.




Description

N-channel enhancement mode vertical D-MOS transistor BSP130 in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers




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