Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Current - Continuous Drain (Id) @ 25° C: 1.9A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Packaging: Cut Tape (CT)
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds: 410pF @ 25V
Parameters: | Technical/Catalog Information | BSP170PE6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 410pF @ 25V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSP170PE6327
BSP170PE6327
BSP170PE6327INTR ND
BSP170PE6327INTRND
BSP170PE6327INTR
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BSP170PE6327 Data Sheet
