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BSP171PE6327

MOSFET P-CH 60V 1.9A SOT223

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SeekIC No. : 003432708 Detail

BSP171PE6327: MOSFET P-CH 60V 1.9A SOT223

BSP171PE6327 Data Sheet

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Part Number:
BSP171PE6327
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET P-Channel, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 460µA Gate Charge (Qg) @ Vgs: 20nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 460pF @ 25V
Power - Max: 1.8W Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Current - Continuous Drain (Id) @ 25° C: 1.9A
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) @ Vds: 460pF @ 25V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 460µA


Parameters:

Technical/Catalog InformationBSP171PE6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs300 mOhm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max1.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSP171PE6327
BSP171PE6327
BSP171PE6327INTR ND
BSP171PE6327INTRND
BSP171PE6327INTR



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