MFG:PHILIPS Package Cooled:SOT223 D/C:09+
MFG: PHILIPS
Package Cooled: SOT223
D/C: 09+
Description: P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use ...
P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
-VDS |
drain-source voltage |
250 |
V | ||
|
-VGSO |
gate-source voltage |
open drain |
20 |
V | |
|
-ID |
DC drain current |
DC value |
225 |
mA | |
|
-IDM |
peak drain current |
peak value |
600 |
A | |
|
Ptot |
total power dissipation |
up to Tamb = 25 °C (note 1) |
1.5 |
W | |
|
Tstg |
storage temperature |
-65 |
150 |
°C | |
|
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
· Low R DS(on)
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
BSP225
PDF/DataSheet Download
SOT223-1.jpg)
MOSFET P-CH 200V 225MA SOT223
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