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BSP295E6327T

MOSFET N-CH 60V 1.8A SOT223

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SeekIC No. : 003433115 Detail

BSP295E6327T: MOSFET N-CH 60V 1.8A SOT223

BSP295E6327T Data Sheet

floor Price/Ceiling Price

US $ .2~.56 / Piece | Get Latest Price
Part Number:
BSP295E6327T
Mfg:
Supply Ability:
5000

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  • 10~100
  • 100~1000
  • Unit Price
  • $.56
  • $.45
  • $.34
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.8V @ 400µA Gate Charge (Qg) @ Vgs: 17nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 368pF @ 25V
Power - Max: 1.8W Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Package / Case: TO-261-4, TO-261AA
Current - Continuous Drain (Id) @ 25° C: 1.8A
Gate Charge (Qg) @ Vgs: 17nC @ 10V
Packaging: Cut Tape (CT)
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds: 368pF @ 25V


Parameters:

Technical/Catalog InformationBSP295E6327T
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C1.8A
Rds On (Max) @ Id, Vgs300 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds 368pF @ 25V
Power - Max1.8W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSP295E6327T
BSP295E6327T
BSP295XTINCT ND
BSP295XTINCTND
BSP295XTINCT



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