BSP317PE6327

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.8W
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 250V
Packaging: Cut Tape (CT)
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Current - Continuous Drain (Id) @ 25° C: 430mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id: 2V @ 370µA
Gate Charge (Qg) @ Vgs: 15.1nC @ 10V
Input Capacitance (Ciss) @ Vds: 262pF @ 25V


Parameters:

Technical/Catalog Information	BSP317PE6327
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	430mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 430mA, 10V
Input Capacitance (Ciss) @ Vds	262pF @ 25V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15.1nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP317PE6327 BSP317PE6327 BSP317PE6327INCT ND BSP317PE6327INCTND BSP317PE6327INCT