Features: · VDS 200 V· ID 0.48 A· RDS(on) 3.5 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain source voltage VDS 200 V Drain-gate voltage RGS = 20 k VDGR 200 V Gate source v...
BSP 149: Features: · VDS 200 V· ID 0.48 A· RDS(on) 3.5 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain sou...
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| Parameter |
Symbol |
Value |
Unit |
| Drain source voltage |
VDS |
200 |
V |
| Drain-gate voltage RGS = 20 k |
VDGR |
200 |
V |
| Gate source voltage |
VGS |
± 14 |
V |
| Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
| Continuous drain current TA = 28 °C |
ID |
0.48 |
A |
| DC drain current, pulsed TA = 25 °C |
IDpuls |
1.44 |
A |
| Power dissipation TA = 25 °C |
Ptot |
1.8 |
W |
| Operating and storage temperature range | Tj, Tstg | 55 . + 150 | °C |
| Thermal resistance 1) chip-ambient | RthJA | 70 | K/W |
| chip-soldering point | RthJS | 10 | K/W |
| DIN humidity category, DIN 40 040 |
E |
||
| IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |