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BSP 319

Features: • N channel• Enhancement mode• Logic Level• Avalanche rated• VGS(th) = 1.2 ...2.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±14 V Gate-source peak voltage,aperiodic Vgs ± 20 V Continuous dra...

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SeekIC No. : 004302247 Detail

BSP 319: Features: • N channel• Enhancement mode• Logic Level• Avalanche rated• VGS(th) = 1.2 ...2.0 VSpecifications Parameter Symbol Value Unit Gate source vol...

BSP 319 Data Sheet

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Part Number:
BSP 319
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 1.2 ...2.0 V


Specifications

Parameter
Symbol
Value
Unit
Gate source voltage
VGS
±14
V
Gate-source peak voltage,aperiodic
Vgs
± 20
V
Continuous drain current TA = 29 °C
ID
3.8
A
DC drain current, pulsed TA = 25 °C
IDpuls
15
A
Avalanche energy, single pulse
ID = 3.8 A, VDD = 25 V, RGS = 25
L = 6.2 mH, Tj = 25 °C
EAS
90
mJ
Power dissipation TA = 25 °C
Ptot
1.8
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air
RthJA
70
K/W
Thermal resistance, chip to ambient air 1)
RthJA
10
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection


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