BSP 320 S

Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 V Continuous drain current TA = 31 °CTA = 100 °C ID 2.91.85 A DC drain current,...

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SeekIC No. : 004302248 Detail

BSP 320 S: Features: • N channel• Enhancement mode• Avalanche rated• VGS(th)= 2.1 ... 4.0 VSpecifications Parameter Symbol Value Unit Gate source voltage VGS ±20 ...

floor Price/Ceiling Price

Part Number:
BSP 320 S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V



Specifications

Parameter
Symbol
Value
Unit
Gate source voltage
VGS
±20
V
Continuous drain current TA = 31 °C
TA = 100 °C
ID

2.9
1.85

A
DC drain current, pulsed TA = 25 °C
IDpuls
11.6
A
Avalanche energy, single pulse
ID =2.9 A, VDD = 25 V, RGS = 25
L = 14.3 mH, Tj = 25 °C
EAS
60
mJ
Avalanche energy, periodic limited byTj(max)
EAR
0.18
mJ
Avalanche current, repetitive,limited byTj(max)
IAR
2.9
A
Reverse diode dv/dt
IS = 2.9 A, VDS = 40 V, di/dt = 200 A/s
Tjmax = 150 °C
dv/dt
6
KV/s
Power dissipation TA = 25 °C
Ptot
1.8
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air
RthJA
70
K/W
Thermal resistance, chip to ambient air 1)
RthJA
17
K/W
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection


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