BSP 452

Features: · High-side switch· Short-circuit protection· Input protection· Overtemperature protection with hysteresis· Overload protection· Overvoltage protection· Switching inductive load· Clamp of negative output voltage with inductive loads· Undervoltage shutdown· Maximum current internally limi...

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SeekIC No. : 004302258 Detail

BSP 452: Features: · High-side switch· Short-circuit protection· Input protection· Overtemperature protection with hysteresis· Overload protection· Overvoltage protection· Switching inductive load· Clamp of ...

floor Price/Ceiling Price

Part Number:
BSP 452
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/18

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Product Details

Description



Features:

· High-side switch
· Short-circuit protection
· Input protection
· Overtemperature protection with hysteresis
· Overload protection
· Overvoltage protection
· Switching inductive load
· Clamp of negative output voltage with inductive loads
· Undervoltage shutdown
· Maximum current internally limited
· Electrostatic discharge (ESD) protection
· Reverse battery protection1)



Application

· mC compatible power switch for 12 V DC grounded loads
· All types of resistive, inductive and capacitive loads
· Replaces electromechanical relays and discrete circuits



Specifications

Parameter
Symbol
Values
Unit
Supply voltage
Vbb
40
V
Load current self-limited
IL
IL(SC)
A
Maximum input voltage2)
VIN
-5.0...Vbb
V
Maximum input current
IIN
±5
mA
Inductive load switch-off energy dissipation,
single pulse IL = 0.5A , TA = 150°C
(not tested, specified by design)
EAS
0.5
J
Load dump protection3) VLoadDump=UA+Vs RL= 24W
RI=2W , td=400ms, IN= low or high, UA=12V RL= 80W
(not tested, specified by design)
VLoad dump4)
47
67
V
Electrostatic discharge capability (ESD)5) PIN 3
PIN 1,2,4
VESD
±1
±2
kV
Operating temperature range
Tj
-40 ...+150
°C
Storage temperature range
Tstg
-55 ...+150
°C
Max. power dissipation (DC)6) TA = 25 °C
Ptot
1.8
W
Thermal resistance chip - soldering point:
RthJS
7
K/W
chip - ambient:6)
RthJA
70
K/W



Description

N channel vertical power FET BSP 452 with charge pump, ground referenced CMOS compatible input,monolithically ntegrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.


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