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Part Number: BSP 452
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically ntegrated in Smar...


Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically ntegrated in Smar...
| Parameter |
Symbol |
Values |
Unit |
| Supply voltage |
Vbb |
40 |
V |
| Load current self-limited |
IL |
IL(SC) |
A |
| Maximum input voltage2) |
VIN |
-5.0...Vbb |
V |
| Maximum input current |
IIN |
±5 |
mA |
| Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150°C (not tested, specified by design) |
EAS |
0.5 |
J |
| Load dump protection3) VLoadDump=UA+Vs RL= 24W RI=2W , td=400ms, IN= low or high, UA=12V RL= 80W (not tested, specified by design) |
VLoad dump4) |
47 67 |
V |
| Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 |
VESD |
±1 ±2 |
kV |
| Operating temperature range |
Tj |
-40 ...+150 |
°C |
| Storage temperature range |
Tstg |
-55 ...+150 |
°C |
| Max. power dissipation (DC)6) TA = 25 °C |
Ptot |
1.8 |
W |
| Thermal resistance chip - soldering point: |
RthJS |
7 |
K/W |
| chip - ambient:6) |
RthJA |
70 |
K/W |
BSP030
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