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Part Number: BSP 452

 

 

 

 

Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically ntegrated in Smar...


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BSP 452 General Description


N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically ntegrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.

BSP 452 Maximum Ratings

Parameter
Symbol
Values
Unit
Supply voltage
Vbb
40
V
Load current self-limited
IL
IL(SC)
A
Maximum input voltage2)
VIN
-5.0...Vbb
V
Maximum input current
IIN
±5
mA
Inductive load switch-off energy dissipation,
single pulse IL = 0.5A , TA = 150°C
(not tested, specified by design)
EAS
0.5
J
Load dump protection3) VLoadDump=UA+Vs RL= 24W
RI=2W , td=400ms, IN= low or high, UA=12V RL= 80W
(not tested, specified by design)
VLoad dump4)
47
67
V
Electrostatic discharge capability (ESD)5) PIN 3
PIN 1,2,4
VESD
±1
±2
kV
Operating temperature range
Tj
-40 ...+150
°C
Storage temperature range
Tstg
-55 ...+150
°C
Max. power dissipation (DC)6) TA = 25 °C
Ptot
1.8
W
Thermal resistance chip - soldering point:
RthJS
7
K/W
chip - ambient:6)
RthJA
70
K/W

BSP 452 Features

· High-side switch
· Short-circuit protection
· Input protection
· Overtemperature protection with hysteresis
· Overload protection
· Overvoltage protection
· Switching inductive load
· Clamp of negative output voltage with inductive loads
· Undervoltage shutdown
· Maximum current internally limited
· Electrostatic discharge (ESD) protection
· Reverse battery protection1)

BSP 452 Typical Application

· mC compatible power switch for 12 V DC grounded loads
· All types of resistive, inductive and capacitive loads
· Replaces electromechanical relays and discrete circuits

BSP 452 datasheet

BSP030
PDF/DataSheet Download

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