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Part Number: BSP 75N
Description: N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.


Description: N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
|
Parameter |
SymboL |
Values |
Unit |
Remarks |
|
Continuous drain source voltage 1) |
VDS |
60 |
V |
|
|
Drain source voltage for short circuit protection |
VDS |
36 |
V |
|
|
Continuous input voltage |
VIN |
-0.2 . +10 |
V |
|
|
Peak input voltage |
VIN |
-0.2 . +20 |
V |
|
|
Continuous Input Current -0.2V VIN 10V VIN<-0.2V or VIN>10V |
IIN |
no limit | IIN | 2mA |
mA |
|
|
Operating temperature range Storage temperature range |
Tj Tstg |
-40 . +150 -55 . +150 |
°C °C |
|
|
Power dissipation (DC) |
Ptot |
1.8 |
W |
|
|
Unclamped single pulse inductive energy |
EAS |
550 |
mJ |
ID(ISO) = 0.7 A; Vbb =32V |
|
Load dump protection 2) IN = low or high (8 V); RL = 50 IN = high (8 V); RL = 22 |
VLoadDump |
80 47 |
V |
VLoadDump = VP + VS; VP = 13.5 V RI 3) = 2 ; td = 400 ms; |
|
Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 |
VESD |
4000 |
V |
|
|
DIN humidity category, DIN 40 040 |
E |
|||
|
IEC climatic category, DIN IEC 68-1 |
40/150/56 |
BSP030
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