BSR50

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-92
Collector- Base Voltage VCBO : 60 V
Maximum Collector Cut-off Current : 0.05 uA
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 15 A


Specifications

SYMBOL	PARAMETER	Ratings	UNIT
VCBO	collector-base voltage	45	V
VCEO	collector-emitter voltage	60	V
VEBO	emitter-base voltage	5	V
IC	Collector Current	1.5	A
Tj Tstg	storage temperature	-55 ~ 150	°C

Description

The BSR50 features are as follows:

• This device designed for applications requiring extremely high gain at collector currents to 0.5A.
• Sourced from Process 06.

Parameters:

Technical/Catalog Information	BSR50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	1.5A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500A, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSR50 BSR50