BSS110

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 0.17 A
Resistance Drain-Source RDS (on) : 10000 mOhms
Package / Case : TO-92-3


Description

The BSS110 is a P-channel enhancement mode field effect transistor.These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. BSS110 very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. BSS110 is particularly suited to low voltage applications requiring a low current high side switch.

Features of the BSS110 are:(1)voltage controlled p-channel small signal switch; (2)high density cell design for low RDS(ON); (3)high saturation current.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

The absolute maximum ratings of the BSS110 can be summarized as:(1)drain-source voltage:-50V;(2)storage temperature range:-55 to 150;(3)operating temperature range:-55 to 150;(4)power dissipation:0.63W;(6)drain-gate voltage:-50V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

Parameters:

Technical/Catalog Information	BSS110
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	170mA
Rds On (Max) @ Id, Vgs	10 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds	40pF @ 25V
Power - Max	630mW
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS110 BSS110