BSS138N-E6327

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 230mA
Power - Max: 360mW
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Input Capacitance (Ciss) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V


Parameters:

Technical/Catalog Information	BSS138N-E6327
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	230mA
Rds On (Max) @ Id, Vgs	3.5 Ohm @ 230mA, 10V
Input Capacitance (Ciss) @ Vds	41pF @ 25V
Power - Max	360mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.4nC @ 10V
Package / Case	SOT-23
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS138N E6327 BSS138NE6327 BSS138NEINTR ND BSS138NEINTRND BSS138NEINTR