FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 540mA
Power - Max: 360mW
Input Capacitance (Ciss) @ Vds: 75pF @ 25V
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Gate Charge (Qg) @ Vgs: 2.26nC @ 10V
Features: · N-Channel
· Enhancement mode
· Logic LevelSpecifications
|
Parameter |
Symbol |
Value |
Unit |
|
Continuous drain current
TA = 25 °C
TA = 70 °C |
ID |
0.54
0.43 |
A |
|
Gate source voltage |
VGS |
±20 |
V |
|
Power dissipation
TA = 25 °C |
Ptot |
0.36 |
W |
|
Operating and storage temperature |
T j , Tstg |
-55...+150 |
°C |
|
IEC climatic category; DIN IEC 68-1 |
|
55/150/56 |
|
Parameters: | Technical/Catalog Information | BSS670S2L |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 540mA |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 270mA, 10V |
| Input Capacitance (Ciss) @ Vds | 75pF @ 25V |
| Power - Max | 360mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 2.26nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS670S2L
BSS670S2L
BSS670S2LINCT ND
BSS670S2LINCTND
BSS670S2LINCT
|
BSS670S2L Data Sheet
