BSS84P-E6327

MOSFET P-CH 60V 170MA SOT-23

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BSS84P-E6327: MOSFET P-CH 60V 170MA SOT-23

floor Price/Ceiling Price

Part Number:
BSS84P-E6327
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 170mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) @ Vgs: 1.5nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 19pF @ 25V
Power - Max: 360mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 1.5nC @ 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 170mA
Power - Max: 360mW
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Input Capacitance (Ciss) @ Vds: 19pF @ 25V
Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V


Parameters:

Technical/Catalog InformationBSS84P-E6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C170mA
Rds On (Max) @ Id, Vgs8 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds 19pF @ 25V
Power - Max360mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.5nC @ 10V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSS84P E6327
BSS84PE6327
BSS84PINTR ND
BSS84PINTRND
BSS84PINTR



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