BSS84P-E6327

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 1.5nC @ 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 170mA
Power - Max: 360mW
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Input Capacitance (Ciss) @ Vds: 19pF @ 25V
Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V


Parameters:

Technical/Catalog Information	BSS84P-E6327
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	170mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 170mA, 10V
Input Capacitance (Ciss) @ Vds	19pF @ 25V
Power - Max	360mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.5nC @ 10V
Package / Case	SOT-23
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS84P E6327 BSS84PE6327 BSS84PINTR ND BSS84PINTRND BSS84PINTR