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- Table of contents:
BSS87
-
Suppliers
DataSheet
General Description
BSS87 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Continuous drain current TA = 25 °C TA = 70 °C |
ID |
0.26 0.21 |
A |
|
Pulsed drain current TA = 25 °C |
I D puls |
1.04 |
|
|
Reverse diode dv/dt IS = -0.33 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 150 °C |
dv/dt |
6 |
kV/s |
|
Gate source voltage |
VGS |
±20 |
V |
|
ESD Sensitivity (HBM) as per MIL-STD 883 |
|
Class 1 |
|
|
Power dissipation TA = 25 °C |
Ptot |
0.52 |
W |
|
Operating and storage temperature |
T j , Tstg |
-55...+150 |
°C |
|
IEC climatic category; DIN IEC 68-1 |
55/150/56 |
BSS87 Features
·N-Channel
·Enhancement mode
·Logic Level
·dv/dt rated
·Enhancement mode
·Logic Level
·dv/dt rated
BSS87
PDF/DataSheet Download
- Datasheet: BSS87
- File Size: 194015 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BSS100
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
- 291374 KB
- ·BSS101
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
- 81058 KB
- ·BSS110
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
- 291933 KB
- ·BSS119
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Small-Signal Transistor (N channel Enhancement mode)
- 83292 KB
- ·BSS123
- INFINEON [Infineon Technologies AG]
- SIPMOS Small-Signal-Transistor
- 79299 KB
- ·BSS123-7
- DIODES [Diodes Incorporated]
- N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
- 69118 KB
- ·BSS123A
- ZETEX [Zetex Semiconductors]
- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
- 46340 KB
- ·BSS123LT1
- ONSEMI [ON Semiconductor]
- Power MOSFET 170 mAmps, 100 Volts
- 59564 KB
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