MOSFET 200V 0.15A 1.0W
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.12 A | ||
| Resistance Drain-Source RDS (on) : | 20000 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-18-3 | Packaging : | Reel |
|
ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | |||||
|
Parameter |
Symbol |
VP2020L |
BSS92 |
Unit | |
|
Drain-Source Voltage |
VDS |
200 |
200 |
V | |
|
Gate-Source Voltage |
VGS |
±20 |
±20 | ||
|
Continuous Drain Currentd (TJ = 175) |
TA = 25 |
ID |
0.12 |
0.15 |
A |
|
TA = 100 |
0.08 |
0.09 | |||
|
Pulsed Drain Current |
IDM |
0.48 |
0.6 | ||
|
Power Dissipation |
TA = 25 |
PD |
0.8 |
1.0 |
W |
|
TA = 100 |
0.32 |
0.4 | |||
|
Thermal Resistance, Junction-to-Ambient |
RthJA |
156 |
125 |
/W | |
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55 to 175 |
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