BT137-800E

Triacs RAIL TRIAC

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BT137-800E Picture
SeekIC No. : 00203387 Detail

BT137-800E: Triacs RAIL TRIAC

floor Price/Ceiling Price

Part Number:
BT137-800E
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Rated Repetitive Off-State Voltage VDRM : 800 V Breakover Current IBO Max : 71 A
Off-State Leakage Current @ VDRM IDRM : 0.1 mA Gate Trigger Voltage (Vgt) : 1.5 V
Gate Trigger Current (Igt) : 25 mA Holding Current (Ih Max) : 20 mA
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Rail    

Description

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Package / Case : TO-220AB
Holding Current (Ih Max) : 20 mA
Rated Repetitive Off-State Voltage VDRM : 800 V
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Gate Trigger Voltage (Vgt) : 1.5 V
Gate Trigger Current (Igt) : 25 mA
Packaging : Rail
Breakover Current IBO Max : 71 A


Features:






Specifications






Description

The BT137-800E is designed as passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

Some limiting values have been concluded into several points of BT137-800E as follow. The first one is about its repetitive peak off-state voltage which would be 800V. The second one is about its RMS on-state current which would be 8A. The third one is about its non-repetitive peak on-state current which would be 65A at t=20ms and would be 71A at t=16.7ms. The fourth one is about its I2t for fusing at t=10ms which would be max 21 A2s. The fifth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s for T2+ G+ and T2+ G- and T2- G- and would be max 10 A/s for T2- G+. The sixth one is about its peak gate current which would be max 2A. The seventh one is about its peak gate voltage which would be max 5V. The eighth one is about its peak gate power which would be max 5W. The ninth one is about its average gate power which would be 0.5W over any 20ms period. The tenth one is about its storage temperature which would be from -40 to 150°C. The eleventh one is about its operating junction temperature which would be max 125°C.

Also some static characteristics aboutBT137-800E. The first one is about its holding current which would be typ 2.5mA and max 20mA. The second one is about its on-state voltage which would be typ 1.3V and max 1.65V. The third one is about BT137-800E gate trigger voltage which would be typ 0.7V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.25v and typ 0.4V with condition of Vd=400V and It=0.1A and Tj=125°C. The fourth one is about BT137-800E off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.






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