BT150M-600R

The BT150M-600R is one of the BT150M series. BT150M-600R is a thyristors logic level.Glass passivated,sensitive gate thyristors in a plastic envelope,suitable for surface mounting,intended for use in general purpose switching and phase control applications.These devices are intended to be interfaced directly to microcontrollers,logic integrated circuits and other low power gate trigger circuits.

The absolute maximum ratings of the BT150M-600R can be summarized as:(1)repetitive peak off-state voltages,V_DRM,V_RRM:6001V;(2)RMS on-state current(all conduction angles),I_T(RMS):4A;(3)non-repetitive peak on-state current:half sine wave,ITSM;T_j=25 proior to surge;(4)I²t for fusing,I²t:t=10ms....35At=8.3ms...38At=10ms...6.1A²S;(5)repetitive rate of rise of on-state current after triggering,dI_T/dt(I_TM=10A,I_G=50mA,dI_G/dt=50 mA/S):50A/S;(6)peak gate current,I_GM:2A;(7)peak gate voltage,V_GM:5V;(8)peak gate power,P_GM:5W;(9)average gate power(over any 20ms period),P_G(AV):0.5W;(10)storage temperature,T_stg:-40 to 150;(11)operating junction temperature,T_j:125²;(12)average on state current(half sine wave;T_mb111),I_T(AV):2.5A;(13)peak reverse gate voltage,V_RGM:5V.1 Although not recommended, off-state voltages up to 800V may be applied without damage,but the triac may switch to the on-state.The rate of rise of current should not exceed 15 A/s.2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.

If you want to know more information such as the electrical characteristics about the BT150M-600R, please download the datasheet in www.seekic.com or www.chinaicmart.com .