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BT150S

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT150S: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT150S Data Sheet

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Part Number:
BT150S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDRM,VRRM


IT(AV)
IT(RMS)
ITSM



I2t
dIT/dt


IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj

 Repetitive peak off-state voltages

Average on-state current
RMS on-state current
Non-repetitive peak
on-state current


I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature

 half sine wave; Tmb 111 °C
all conduction angles
half sine wave; Tj = 25 °C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/s






over any 20 ms period
-

-

-

-
-
-



-
-
-
-
-
-40
-
-500R
5001
-650R
6501
-800R
800
V

A
A


A
A
A2s
A/s



A
V
V
W
W

2.5
4


35
38
6.1
50



2
5
5
5
0.5
150
1252




Description

Glass passivated, sensitive gate thyristors BT150S in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. BT150S are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.




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