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BT258B

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT258B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT258B Data Sheet

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Part Number:
BT258B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDRM,VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj

 Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction temperature		 full sine wave; Tmb 111 °C
full sine wave; Tj = 25 °C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 A;
dIG/dt = 50 A/ms
over any 20 ms period

-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-


-500
5001

  -600
6001		  -800
8001

V
A
A
A
A2s
A/s
A
V
W
W

5
8
75
82
28
50
2
5
5
5
0.5
150
1252




Description

Glass passivated, sensitive gate thyristors BT258B in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.


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