BTA212-800B

Triacs RAIL 3Q TRIAC

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SeekIC No. : 00203367 Detail

BTA212-800B: Triacs RAIL 3Q TRIAC

floor Price/Ceiling Price

Part Number:
BTA212-800B
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Rated Repetitive Off-State Voltage VDRM : 800 V Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Gate Trigger Voltage (Vgt) : 1.5 V Gate Trigger Current (Igt) : 50 mA
Holding Current (Ih Max) : 60 mA Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Breakover Current IBO Max :
On-State RMS Current (It RMS) :
Gate Trigger Current (Igt) : 50 mA
Mounting Style : Through Hole
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 800 V
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Holding Current (Ih Max) : 60 mA
Gate Trigger Voltage (Vgt) : 1.5 V
Packaging : Rail


Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM Repetitive peak off-state voltages   - -600
600
V
IT(RMS) RMS on-state current full sine wave;Tmb 99 ˚C - 12 A
ITSM Non-repetitive peak on-state current full sine wave; Tj = 25 ˚C prior to surge
t = 20 ms
t = 16.7 ms
-
-
95
105
A
A
I2t I2t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of on-state current after triggering ITM = 1,5A; IG = 0.2 A;
dIG/dt =0.2 A/µs
-
100 A/µs
IGM Peak gate current over any 20 ms period - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction temperature - 125 ˚C



Description

Glass passivated high commutation triacs BTA212-800B in a plastic envelope intended foruse incircuitswherehigh staticand dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximumrated junction temperature, without the aid of a snubber.




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