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BTC5177N3

Features: • Low current consumption and high gain:S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHzS21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz• Mini-mold packageApplication• Low noise and high gain amplifiers & Oscillator buffer amplifiersPinoutSpeci...

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SeekIC No. : 004302897 Detail

BTC5177N3: Features: • Low current consumption and high gain:S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHzS21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz• Mini-mold packag...

BTC5177N3 Data Sheet

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Part Number:
BTC5177N3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current consumption and high gain:
S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz
S21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz
• Mini-mold package


Application

• Low noise and high gain amplifiers & Oscillator buffer amplifiers


Pinout

Connection Diagram


Specifications

Collector-Emitter Breakdown Voltage VCEO ....3 V
Collector-Base Breakdown Voltage VCBO .......5 V
Emitter-Base Breakdown Voltage VEBO ..........2 V
Collector Current IC ...................................10 mA
Collector Power Dissipation Pd ...............150 mW
Junction Temperature Tj ...........................150 °C
Storage Temperature Tstg ..............-65~+150 °C


Description

The BTC5177N3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application.




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