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BTC5181WC3

Features: • Low current consumption and high gain:S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHzS21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz• Super mini-mold packagePinoutSpecifications Parameters Symbol Limits Unit Collector-Emitter Break...

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SeekIC No. : 004302899 Detail

BTC5181WC3: Features: • Low current consumption and high gain:S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHzS21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz• Super mini-mold ...

BTC5181WC3 Data Sheet

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Part Number:
BTC5181WC3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current consumption and high gain:
S21e² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz
S21e² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz
• Super mini-mold package




Pinout

Connection Diagram




Specifications

Parameters
Symbol
Limits
Unit
Collector-Emitter Breakdown Voltage
VCEO
3
V
Collector-Base Breakdown Voltage
VCBO
5
V
Emitter-Base Breakdown Voltage
VEBO
2
V
Collector Current
IC
10
mA
Collector Power Dissipation
PD
30
mW
Junction Temperature
TJ
150
Storage Temperature
TSTG
-65~+150





Description

The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application.




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