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BTS115A

MOSFET N-Channel 50V TEMPFET

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SeekIC No. : 00159295 Detail

BTS115A: MOSFET N-Channel 50V TEMPFET

BTS115A Data Sheet

floor Price/Ceiling Price

US $ 2.17~3.08 / Piece | Get Latest Price
Part Number:
BTS115A
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~271
  • 271~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $3.08
  • $2.59
  • $2.25
  • $2.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity : N Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 15.5 A
Resistance Drain-Source RDS (on) : 120 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 10 V
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 120 mOhms
Continuous Drain Current : 15.5 A
Transistor Polarity : N Channel


Features:

 N channel
 Logic level
 Enhancement mode
 Temperature sensor with thyristor characteristic
 The drain pin is electrically shorted to the tab


Specifications

Parameter Symbol Values Unit
Drain-source voltage VDS 50 V
Drain-gate voltage, RGS = 20 k VDGR 50
Gate-source voltage VgS ± 10
Continuous drain current, TC = 25 °C ID 15.5 A
ISO drain current
TC = 85 °C, VGS = 4.5 V, VDS = 0.5 V		 ID-ISO 3.2
Pulsed drain current, TC = 25 °C ID puls 62
Short circuit current, Tj = 55 ... + 150 °C ISC 37
Short circuit dissipation, Tj = 55 ... + 150 °C PSCmax 550 W
Power dissipation Ptot 50
Operating and storage temperature range Tj, Tstg 55 ... + 150 °C
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/150/56
Thermal resistance
Chip-case
Chip-ambient		 Rth JC
Rth JA		 2.5
75		 K/W



Parameters:

Technical/Catalog InformationBTS115A
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C15.5A
Rds On (Max) @ Id, Vgs120 mOhm @ 7.8A, 4.5V
Input Capacitance (Ciss) @ Vds 735pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS115A
BTS115A
BTS115AIN ND
BTS115AINND
BTS115AIN



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