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MFG:INF/SIE Package Cooled:TO-220 D/C:05+

MFG:INF/SIE Package Cooled:TO-220 D/C:05+

| Parameter | Symbol | Values | Unit |
| Drain-source voltage | VDS | 50 | V |
| Drain-gate voltage, RGS = 20 k | VDGR | 50 | |
| Gate-source voltage | VgS | ± 10 | |
| Continuous drain current, TC = 25 °C | ID | 15.5 | A |
| ISO drain current TC = 85 °C, VGS = 4.5 V, VDS = 0.5 V |
ID-ISO | 3.2 | |
| Pulsed drain current, TC = 25 °C | ID puls | 62 | |
| Short circuit current, Tj = 55 ... + 150 °C | ISC | 37 | |
| Short circuit dissipation, Tj = 55 ... + 150 °C | PSCmax | 550 | W |
| Power dissipation | Ptot | 50 | |
| Operating and storage temperature range | Tj, Tstg | 55 ... + 150 | °C |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
| Thermal resistance Chip-case Chip-ambient |
Rth JC Rth JA |
2.5 75 |
K/W |
BTS115A
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