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Part Number: BTS117

 

 

 

 

Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protecte...


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BTS117 General Description


N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions.

BTS117 Maximum Ratings

 Parameter  Symbol  Value  Unit
 Drain source voltage  VDS  60  V
 Drain source voltage for short circuit protection  VDS(SC)  32
 Continuous input current 1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V		  IIN  no limit
| IIN | 2		  mA
 Operating temperature  Tj  - 40 ... +150  
 Storage temperature  Tstg  - 55 ... +150  
 Power dissipation
TC = 25 		 Ptot  50  W
 Unclamped single pulse inductive energy
ID(ISO) = 3.5 A		  EAS  1000  mJ
 Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993		  VESD  3000  V

 Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 Ω, ID=0,5*3.5A
td = 400 ms, RI = 2 Ω, ID= 3.5A

 VLD   75
70
 DIN humidity category, DIN 40 040    E  
 IEC climatic category; DIN IEC 68-1    40/150/56  

BTS117 Features

• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible

BTS117 Typical Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• C compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

BTS117 datasheet

BTS117
PDF/DataSheet Download

  • Datasheet: BTS117
  • File Size: 202350 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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Related Part Number

BTS117 Relative Products

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