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Part Number: BTS133

 

MFG: infineon

 

D/C: 06+

Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded prote...


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BTS133 General Description


N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions.

BTS133 Maximum Ratings

Parameter Symbol

Value

 Unit
Drain source voltage VDS
60
 V
Drain source voltage for short circuit protection VDS(SC)
32
Continuous input current1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V		 IIN
no limit
| IIN | 2
 mA
Operating temperature Tj
- 40 ... +150
 °C
Storage temperature Tstg
- 55 ... +150
Power dissipation
TC = 25 °C		 Ptot
90
 W
Unclamped single pulse inductive energy
ID(ISO) = 7 A		 EAS

2000

 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993		 VESD
3000
 V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*7A
td = 400 ms, RI = 2 , ID= 7A		 VLD
90
74
 V
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56

BTS133 Features

• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible

BTS133 Typical Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• C compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

BTS133 datasheet

BTS133
PDF/DataSheet Download

  • Datasheet: BTS133
  • File Size: 202737 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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