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MFG:INFINON D/C:05+


Part Number: BTS149
MFG: INFINON
D/C: 05+
Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded prote...
MFG:INFINON D/C:05+


MFG: INFINON
D/C: 05+
Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded prote...
| Parameter | Symbol |
Value |
Unit |
| Drain source voltage | VDS |
60 |
V |
| Drain source voltage for short circuit protection | VDS(SC) |
32 | |
| Continuous input current -0.2V VIN 10V VIN < -0.2V or VIN > 10V |
IIN |
no limit | IIN | 2 |
mA |
| Operating temperature | Tj |
- 40 ... +150 |
°C |
| Storage temperature | Tstg |
- 55 ... +150 | |
| Power dissipation TC = 25 °C |
Ptot |
178 |
W |
| Unclamped single pulse inductive energy ID(ISO) = 19 A |
EAS |
6000 |
mJ |
| Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 |
VESD |
3000 |
V |
| Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 , ID=0,5*19A td = 400 ms, RI = 2 , ID= 19A |
VLD |
110 |
V |
| DIN humidity category, DIN 40 040 |
E |
||
| IEC climatic category; DIN IEC 68-1 |
40/150/56 |
BTS149
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