BTS149

Number of Outputs : 1
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
On Resistance (Max) : 18 mOhms
On Time (Max) : 100 us
Off Time (Max) : 170 us
Operating Supply Voltage : 2.2 V to 10 V
Supply Current (Max) : 100 uA
Package / Case : TO-220-3


Features:

• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible


Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• C compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits


Specifications

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	60	V
Drain source voltage for short circuit protection	VDS(SC)	32
Continuous input current -0.2V VIN 10V VIN < -0.2V or VIN > 10V	IIN	no limit | IIN | 2	mA
Operating temperature	Tj	- 40 ... +150	°C
Storage temperature	Tstg	- 55 ... +150
Power dissipation TC = 25 °C	Ptot	178	W
Unclamped single pulse inductive energy ID(ISO) = 19 A	EAS	6000	mJ
Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993	VESD	3000	V
Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 , ID=0,5*19A td = 400 ms, RI = 2 , ID= 19A	VLD	110	V
DIN humidity category, DIN 40 040		E
IEC climatic category; DIN IEC 68-1		40/150/56

Description

N channel vertical power FET BTS149 in Smart SIPMOS^® chip on chip technology. Fully protected by embedded protected functions.