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MFG:INFINEON  Package Cooled:704  D/C:4  

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Part Number: BTS3410G

 

MFG: INFINEON

Package Cooled: 704

D/C: 4

Description: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.


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BTS3410G General Description


N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

BTS3410G Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage VDS

42

V

Drain source voltage for short circuit protection1)
Tj = -40...150 °C		 VDS(SC)

18

Continuous input current1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V		 IIN

no limit
| IIN |  2

mA

Operating temperature Tj

-40 ...+150

°C

Storage temperature Tstg

-55 ... +150

Power dissipation2)5)
TA = 85 °C		 Ptot

0.8

W

Unclamped single pulse inductive energy1)
each channel		 EAS

150

mJ

Load dump protection VLoadDump1)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 ,
RL = 9 , VA = 13.5 V		 VLD

50

V

Electrostatic discharge voltage1) (Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4		 VESD 2 kV
Jedec humidity category,J-STD-20-B   MSL1  
IEC climatic category; DIN EN 60068-1   40/150/56  

BTS3410G Features

 Logic Level Input
Input Protection (ESD)
Thermal shutdown with auto restart
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible

BTS3410G Typical Application

 All kinds of resistive, inductive and capacitive loads in switching or linear applications
  C compatible power switch for 12 V DC applications
  Replaces electromechanical relays and discrete circuits

BTS3410G Connection Diagram

BTS3410G Connection Diagram

BTS3410G datasheet

BTS3410G
PDF/DataSheet Download

  • Datasheet: BTS3410G
  • File Size: 327834 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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