BTS462T

Power Switch ICs - POE / LAN Smart High Side MINI-PROFET

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BTS462T Picture
SeekIC No. : 00629103 Detail

BTS462T: Power Switch ICs - POE / LAN Smart High Side MINI-PROFET

floor Price/Ceiling Price

US $ .59~.65 / Piece | Get Latest Price
Part Number:
BTS462T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1740
  • 1740~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.65
  • $.61
  • $.61
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Quick Details

On Resistance (Max) : 0.2 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TO-252-5    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
Package / Case : TO-252-5
Maximum Operating Temperature : + 150 C
On Resistance (Max) : 0.2 Ohms


Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current



Application

• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits



Specifications

Parameter  Symbol  Value Unit 
Supply voltage  Vbb  40  V
Supply voltage for full short circuit protection
Tj = -40...+150 °C
 Vbb(SC)  32
Continuous input voltage  VIN  -10 ... +16
Load current (Short - circuit current, see page 5)  IL  self limited  A
Current through input pin (DC)  IIN  ± 5  mA
Operating temperature  Tj  -40 ...+150  °C
Storage temperature  Tstg  -55 ... +150
Power dissipation 1)  Ptot  41.6  W

Inductive load switch-off energy dissipation1)2)
single pulse, (see page 8)
Tj =150 °C, Vbb = 13.5 V, IL = 1 A

 EAS  4.4  J

Load dump protection2) VLoadDump3)= VA + VS
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 13.5 Ω

 VLoaddump  75  V

Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins

 VESD

± 1
± 5

 kV



Description

N channel vertical power FET BTS462T with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology.
The BTS462T is providing embedded protective functions.


Parameters:

Technical/Catalog InformationBTS462T
VendorInfineon Technologies (VA)
CategoryIntegrated Circuits (ICs)
Package / CaseDPak, TO-252 (4 leads + tab)
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply5 V ~ 34 V
On-State Resistance70 mOhm
Current - Output / Channel4.4A
Current - Peak Output14A
PackagingCut Tape (CT)
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS462T
BTS462T
BTS462TINCT ND
BTS462TINCTND
BTS462TINCT



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