BTS555

Power Switch ICs - POE / LAN Smart Highside High Current Power Switch

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SeekIC No. : 00629213 Detail

BTS555: Power Switch ICs - POE / LAN Smart Highside High Current Power Switch

floor Price/Ceiling Price

Part Number:
BTS555
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

On Resistance (Max) : 0.0019 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-218-5    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
On Resistance (Max) : 0.0019 Ohms
Package / Case : TO-218-5


Features:

• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 2)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection3)
• Electrostatic discharge (ESD) protection



Application

• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits



Specifications

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 4) Vbb

40

V

Supply voltage for full short circuit protection
(EAS limitation see diagram on page 9)Tj,start =-40 ...+150°C
Vbb

34

V
Load current (Short-circuit current, see page 5) IL

self-limited

A

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI6) = 2 ,RL=0.1, td = 200 ms;
IN,IS= open or grounded
VLoad dump7)

80

V

Operating temperature range
Storage temperature range
Tj
Tstg

-40 ...+150
-55 ...+150

°C
Power dissipation (DC), TC 25 °C Ptot
360
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC = 150°C const.,
IL = 20 A, ZL = 15 mH, 0, see diagrams on page 10
EAS

3

J

Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
VESD

4.0

kV

Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
IIN
IIS
+15, -250
+15, -250
mA



Description

N channel vertical power FET BTS555 with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.


Parameters:

Technical/Catalog InformationBTS555
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseTO-218AB/5-1
Mounting TypeThrough Hole
TypeHigh Side
Voltage - Supply5 V ~ 34 V
On-State Resistance1.9 mOhm
Current - Output / Channel165A
Current - Peak Output400A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS555
BTS555



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