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MFG:SIEMENS D/C:03+


Part Number: BTS611L1
MFG: SIEMENS
D/C: 03+
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic ...
MFG:SIEMENS D/C:03+


MFG: SIEMENS
D/C: 03+
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic ...
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.
| Parameter |
Symbol |
Values |
Unit |
| Supply voltage (overvoltage protection see page 4) | Vbb |
43 |
V |
| Supply voltage for full short circuit protection Tj Start=-40 ...+150°C |
Vbb |
34 |
V |
| Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, R = 5.3 Ω, t = 200 ms, IN= low or high |
VLoaddump4) |
60 |
V |
| Load current (Current limit, see page 5) | IL |
self-limited |
A |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
| Power dissipation (DC), TC 25 °C | Ptot |
36 |
W |
| Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω: both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω: see diagrams on page 9 |
EAS |
290 580 |
mJ |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; |
VESD |
1.0 2.0 |
kV |
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 |
IIN IST |
-10 ... +16 ±2.0 ±5.0 |
V mA |
BTS611L1
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