BTS611L1

Type: High Side
Input Type: Non-Inverting
Number of Outputs: 2
Mounting Type: Through Hole
Packaging: Tube
Operating Temperature: -40°C ~ 150°C
Current - Output / Channel: 2.3A
On-State Resistance: 160 mOhm
Manufacturer: Infineon Technologies
Current - Peak Output: 7.5A
Voltage - Supply: 5 V ~ 34 V
Series: PROFET®
Package / Case: TO-220-7 Formed Leads
Supplier Device Package: TO-220AB/7


Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection¹)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of V_bb protection
• Electrostatic discharge (ESD) protection


Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits



Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	43	V
Supply voltage for full short circuit protection Tj Start=-40 ...+150°C	Vbb	34	V
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, R = 5.3 Ω, t = 200 ms, IN= low or high	VLoaddump4)	60	V
Load current (Current limit, see page 5)	IL	self-limited	A
Operating temperature range Storage temperature range	Tj Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC), TC 25 °C	Ptot	36	W
Inductive load switch-off energy dissipation, single pulse   Vbb = 12V, Tj,start = 150°C, TC = 150°C const.                                      one channel, IL = 2.3 A, ZL = 89 mH, 0  Ω:                       both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω:   see diagrams on page 9	EAS	290  580	mJ
Electrostatic discharge capability (ESD)                                      IN:  (Human Body Model)                                                 all other pins:                                                acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993;	VESD	1.0 2.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7	IIN IST	-10 ... +16 ±2.0 ±5.0	V mA

Description

N channel vertical power FET BTS611L1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS^® technology. Fully protected by embedded protection functions.

Parameters:

Technical/Catalog Information	BTS611L1
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	TO-220AB-7
Mounting Type	Through Hole
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	160 mOhm
Current - Output / Channel	2.3A
Current - Peak Output	7.5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BTS611L1 BTS611L1 BTS611L1IN ND BTS611L1INND BTS611L1IN