BU2508DX

PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IB(AV)IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Collector current (DC)Collector current peak valueBase current (DC)Base current peak valueReverse base c...

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BU2508DX Picture
SeekIC No. : 004303218 Detail

BU2508DX: PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IB(AV)IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Coll...

floor Price/Ceiling Price

Part Number:
BU2508DX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER CONDTIONS
MIN.
MAX.
UNIT

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
IBM
Ptot
Tstg
Tj

Collector to emitter voltage
Collector to emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value1
Total power dissipation
Storage temperature
Junction temperature
VBE=0V
average over any 20 ms period
Ths25
-
-
-
-
-
-
-
-
-
-55
-
1500
700
8
15
4
6
100
5
45
150
150
V
V
A
A
A
A
mA
A
W






Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor BU2508DX with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features of BU2508DX exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

The BU2508DX is designed as one kind of new generation, high-voltage, high-speed switching silicon diffused power transistor device that integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

The absolute maximum ratings of the BU2508DX can be summarized as:(1)Collector-emitter voltage peak value: 1500 V;(2)Collector-emitter voltage (open base): 700 V;(3)Collector current (DC): 8 A;(4)Collector current peak value: 15 A;(5)Base current (DC): 4 A;(6)Base current peak value: 6 A;(7)Reverse base current: 100 mA;(8)Reverse base current peak value: 5 A;(9)Total power dissipation: 45 W;(10)Storage temperature: -55 to 150 °C;(11)Junction temperature: 150 °C.

The electrical characteristics of BU2508DX can be summarized as:(1)Collector cut-off current: 1.0 or 2.0 mA;(2)Emitter cut-off current: 227 mA;(3)Emitter-base breakdown voltage: 7.5 to 13.5 V;(4)Base-emitter resistance: 33 ;(5)Collector-emitter sustaining voltage: 700 V;(6)Collector-emitter saturation voltages: 1.0 V;(7)Base-emitter saturation voltage: 1.1 V;(8)DC current gain: 13;(9)Diode forward voltage: 1.6 V to 2.0 V. If you want to know more information about the BU2508DX, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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