High voltage, high-speed switching npn transistors BU508DX in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
High voltage, high-speed switching npn transistors BU508DWin a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.