BU808DFI

Transistors Darlington NPN Sw Darlington

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BU808DFI Picture
SeekIC No. : 00217444 Detail

BU808DFI: Transistors Darlington NPN Sw Darlington

floor Price/Ceiling Price

Part Number:
BU808DFI
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 700 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 1400 V Maximum DC Collector Current : 8 A
Power Dissipation : 52 W Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-93
Packaging : Tube    

Description

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 700 V
Collector- Base Voltage VCBO : 1400 V
Power Dissipation : 52 W


Features:

·STMicroelectronics PREFERRED SALESTYPE
· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
· HIGH VOLTAGE CAPABILITY ( > 1400 V )
· HIGH DC CURRENT GAIN ( TYP. 150 )
· U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
·LOW BASE-DRIVE REQUIREMENTS
·DEDICATED APPLICATION NOTE AN1184



Application

· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.




Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 1400 V
VCEO Collector-Emit ter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 8 A
ICM Collector Peak Current (tp < 5 ms) 10 A
IB Base Current 3 A
IBM Base Peak Current (tp < 5 ms) 6 A
Ptot Total Dissipation at Tc = 25 52 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.




Parameters:

Technical/Catalog InformationBU808DFI
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)700V
Current - Collector (Ic) (Max)8A
Power - Max52W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500mA, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)400A
Mounting TypeThrough Hole
Package / CaseISOWATT-218-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BU808DFI
BU808DFI



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