BU808DFI

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 700 V
Collector- Base Voltage VCBO : 1400 V
Power Dissipation : 52 W


Features:

·STMicroelectronics PREFERRED SALESTYPE
· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
· HIGH VOLTAGE CAPABILITY ( > 1400 V )
· HIGH DC CURRENT GAIN ( TYP. 150 )
· U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
·LOW BASE-DRIVE REQUIREMENTS
·DEDICATED APPLICATION NOTE AN1184


Application

· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.

Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	1400	V
VCEO	Collector-Emit ter Voltage (IB = 0)	700	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IC	Collector Current	8	A
ICM	Collector Peak Current (tp < 5 ms)	10	A
IB	Base Current	3	A
IBM	Base Peak Current (tp < 5 ms)	6	A
Ptot	Total Dissipation at Tc = 25	52	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

Parameters:

Technical/Catalog Information	BU808DFI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	52W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	400A
Mounting Type	Through Hole
Package / Case	ISOWATT-218-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU808DFI BU808DFI