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BU808DFP

Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION(U.L. COMPLIANT)· LOW BASE-DRIVE REQUIREMENTS· DEDICATED APPL...

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SeekIC No. : 004303950 Detail

BU808DFP: Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY M...

BU808DFP Data Sheet

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Part Number:
BU808DFP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· STMicroelectronics PREFERRED SALESTYPE
· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
· HIGH VOLTAGE CAPABILITY ( > 1400 V )
· HIGH DC CURRENT GAIN ( TYP. 150 )
· FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION(U.L. COMPLIANT)
· LOW BASE-DRIVE REQUIREMENTS
· DEDICATED APPLICATION NOTE AN1184


Application

· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.




Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 1400 V
VCEO Collector-Emit ter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 8 A
ICM Collector Peak Current (tp < 5 ms) 10 A
IB Base Current 3 A
IBM Base Peak Current (tp < 5 ms) 6 A
Ptot Total Dissipation at Tc = 25 42 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150
 



Description

The BU808DFP is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.




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