Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION(U.L. COMPLIANT)· LOW BASE-DRIVE REQUIREMENTS· DEDICATED APPL...
BU808DFP: Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY M...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage (IE = 0) | 1400 | V |
| VCEO | Collector-Emit ter Voltage (IB = 0) | 700 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
| IC | Collector Current | 8 | A |
| ICM | Collector Peak Current (tp < 5 ms) | 10 | A |
| IB | Base Current | 3 | A |
| IBM | Base Peak Current (tp < 5 ms) | 6 | A |
| Ptot | Total Dissipation at Tc = 25 | 42 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
The BU808DFP is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.