BU941ZPFI

Collector- Base Voltage VCBO :
Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Power Dissipation : 65 W
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 350 V
Package / Case : TO-3PF


Features:

· VERY RUGGED BIPOLARTECHNOLOGY
·BUILT IN CLAMPING ZENER
· HIGH OPERATINGJUNCTION TEMPERATURE
· WIDE RANGE OF PACKAGES




Application

· HIGH RUGGEDNESS ELECTRONIC IGNITIONS




Specifications

Symbol	Parameter	Value			Unit
		BU941Z	BU941P	BUB941PFI
VCEO	Collector-Emit ter Voltage (IB = 0)	350			V
VEBO	Emitter-Base Voltage (IC = 0)	5			V
IC	Collector Current	15			A
ICM	Collector Peak Current	30			A
IB	Base Current	1			A
IBM	Base Peak Current	5			A
Ptot	Total Dissipation at Tc 25	180	155	65	W
Tstg	Storage Temperature	-65 to 200	-65 to 175	-65 to 175
Tj	Max. Operating Junction Temperature	200	175	175

Parameters:

Technical/Catalog Information	BU941ZPFI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	15A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 5A, 10V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 250mA, 10A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-3PF
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU941ZPFI BU941ZPFI 497 2542 5 ND 49725425ND 497-2542-5