BUD42D

Transistors Bipolar (BJT) 4A 650V 25W NPN

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SeekIC No. : 00214444 Detail

BUD42D: Transistors Bipolar (BJT) 4A 650V 25W NPN

floor Price/Ceiling Price

Part Number:
BUD42D
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 9 V


Features:

* Free Wheeling Diode Built In
* Flat DC Current Gain
* Fast Switching Times and Tight Distribution
* "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads
* Epoxy Meets UL94, VO @ 1/8"
* ESD Ratings: Machine Model, C; >400 V
                        Human Body Model, 3B; >8000 V



Specifications

 Rating  Symbol  Value  Unit
 Collector-Emitter Sustaining Voltage  VCEO  350  Vdc
 Collector-Base Breakdown Voltage  VCBO  650  Vdc
 Collector-Emitter Breakdown Voltage  VCES  650  Vdc
 Emitter-Base Voltage  VEBO  9  Vdc
 Collector Current- Continuous
                           - Peak (Note 1)
IC
ICM
4.0
8.0
 Adc
 Base Current - Continuous
                      - Peak (Note 1)
IB
IBM
1.0
2.0
 Adc
 *Total Device Dissipation @ TC = 25
*Derate above 25
 PD 25
0.2
Watt
W/
 Operating and Storage Temperature  TJ , Tstg  -65 to +150  



Description

The BUD42D is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications.


Parameters:

Technical/Catalog InformationBUD42D
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)4A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic200mV @ 500mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUD42D
BUD42D



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