BUH50

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Package / Case : TO-220AB
Packaging : Tube
Maximum Operating Frequency : 4 MHz (Min)
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 500 V
DC Collector/Base Gain hfe Min : 7


Features:

• Improved Efficiency Due to Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
• Motorola "6SIGMA" Philosophy Provides Tight and Reproductible Parametric Distributions
• Specified Dynamic Saturation Data
• Full Characterization at 125°C


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	VCEO	500	Vdc
CollectorBase Breakdown Voltage	VCBO	800	Vdc
CollectorEmitter Breakdown Voltage	VCES	800	Vdc
EmitterBase Voltage	VEBO	9	Vdc
Collector Current - Continuous - Peak (1)	IC ICM	4 8	Adc
Base Current - Continuous - Peak (1)	IB IBM	2 4	Adc
*Total Device Dissipation @ TC = 25 *Derate above 25	PD	50 0.4	Watt W/
Operating and Storage Temperature	TJ, Tstg	65 to 150

Description

The BUH50 has an application specific stateofart die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications.


Parameters:

Technical/Catalog Information	BUH50
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	500V
Current - Collector (Ic) (Max)	4A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	7 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 330mA, 1A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUH50 BUH50