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BUK1M200-50SDLD

Features: Power TrenchMOSOvertemperature protectionOverload protectionInput-source voltage resets latched protection circuitry.Inputusedtocontroloutputstageand supply overload protection circuits5 V logic compatible input levelCurrent limitingESD protection for all pinsOverfatigue clamping for tur...

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BUK1M200-50SDLD: Features: Power TrenchMOSOvertemperature protectionOverload protectionInput-source voltage resets latched protection circuitry.Inputusedtocontroloutputstageand supply overload protection circuits5 V...

BUK1M200-50SDLD Data Sheet

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Part Number:
BUK1M200-50SDLD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Power TrenchMOS
Overtemperature protection
Overload protection
Input-source voltage resets latched protection circuitry.
Inputusedtocontroloutputstageand supply overload protection circuits
5 V logic compatible input level
Current limiting
ESD protection for all pins
Overfatigue clamping for turn off of inductive loads
Low operating input current permits direct drive by micro-controller.




Application

Low-side driver
Low frequency Pulse Width Modulation
DC switching
General purpose switch for driving lamps,motors,solenoidsandheaters.


Pinout

Connection Diagram


Specifications

 Symbol  Parameter  Conditions  Min  Max  Unit
 VDS  drain-source voltage[1]
    -  50  V
 II  input current  clamping  -  3  mA
 Ptot  tatal power dissipation[2]
  Tsp25; Figure 4  -  9.4  W
 IIMS  non-repetitive peak input current  tp1 ms  -  10  mA
 Tstg  storage temperature    -55  +150  
 Tj  junction temperature[3]
  normal operation  -  150  
Overvoltage clamping[4]
 EDS(CL)S  non-repetitive drain-source clamping energy[5]  Tamb=25; IDMID(lim) (refer to Table 5); inductive load  -  100  mJ
 EDS(CL)R  repetitive drain-source clamping[5]
  Tsp125;IDM=50mA;f=250Hz  -  5  mJ
Overload protection[6]
 VDS(prot)  protected drain-source voltage  VIS4V  -  35  V
Reverse diode
 IS  source(diode forward) current  Tsp25;VIS=0V  -  2  A
Electrostatic discharge
 Vesd  electrostatic discharge voltage  C=250 pF; R=1.5k  -  2  kV

[1]   Prior to the onset of overvoltage clamping. For voltages above this value, safe operatiion is limited by the overvoltage clamping energy.
[2]   For all devices active.
[3]   Not in an overload condition with drain current limiting.
[4]   At a drain-source voltage above 50V the power MOSFET is actively turnde on to clamp overvoltage transients.
[5]   Single active device.
[6]   With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by means of drain current limiting and by activating the overtemperature protection.



Description

Quad temperature and overload protected logic level power MOSFET BUK1M200-50SDLD in TOPFET technology in a 20-pin surface mount plastic package.


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