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BUK553-100B

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS ±VGSMIDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltageNon-repetitive gate-source voltageDrain current(DC)Drain current(DC)Drain current (pulse peak value)To...

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BUK553-100B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS ±VGSMIDIDIDMPtotTstgTj Drain-source voltageDrain-gate voltageGate-source voltageNo...

BUK553-100B Data Sheet

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Part Number:
BUK553-100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT

VDS
VDGR
±VGS
±VGSM

ID
ID
IDM
Ptot
Tstg
Tj

Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage

Drain current(DC)
Drain current(DC)
Drain current (pulse peak value)
Total power dissipation
Stroage temperature
Junction Temperature

-
RGS=20 k
-
tp50s

Tmb=25
Tmb=100
Tmb=25
Tmb=25
-
-

-
-
-
-

-
-
-
-
-55
-

100
10 0
15
20

V
V
V
V

A
A
A
W

-100A
13
9
52

-100B
12
8.5
48

75
175
175




Description

N-channel enhancement mode logic level field-effect power transistor BUK553-100B in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.


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