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BUK563-48C

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage continuous - 30 V VDG Drain-gate voltage continuous - 30 V ±VGS Gate-source voltage - - 15 V ID Drain current(DC) Tmb=25 - 21 A ID Drain current(DC) Tmb=100 - 1...

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BUK563-48C: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage continuous - 30 V VDG Drain-gate voltage continuous - 30 V ±VGS Gate-source vol...

BUK563-48C Data Sheet

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Part Number:
BUK563-48C
Supply Ability:
5000

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage  continuous  - 30 V
VDG Drain-gate voltage  continuous  - 30 V
±VGS Gate-source voltage  -  - 15 V
ID Drain current(DC)  Tmb=25  - 21 A
ID Drain current(DC)  Tmb=100  - 15 A
ICM Drain current (pulse peak value)  Tmb=25  - 84 A
Ptot Total power dissipation  Tmb=25  - 75 W
Tstg Stoage temperature  -  -55 175
Tj Junction temperature  -  -55 175



Description

ProtectedN-channelenhancement modelogiclevelfield-effectpower transistor BUK563-48C inaplasticenvelope suitableforsurfacemount applications.
BUK563-48C isintendedforusein automotiveapplications.It has built-inzenerdiodesprovidingactive drainvoltageclamping.


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