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Part Number: BUK563-80B

 

 

 

 

Description: N-channel enhancement mode logic evel field-effect power transistor in a plastic envelope suitable forsurface mount app...


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BUK563-80B General Description


N-channel enhancement mode logic evel field-effect power transistor in a plastic envelope suitable forsurface mount applications. The device is intended for use in automotive and general purpose switching applications.

BUK563-80B Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage -  - 80 V
VDGR Drain-gate voltage  RGS=20k  - 80 V
±VGS Gate-source voltage  -  - 15 V
ID Collector current (DC)  Tmb=25  - 16 A
ID Drain current (DC)  Tmb=100  - 11 A
IDM Drain current (pulse peak value)  Tmb=25  - 64 A
Ptot Total power dissipation  Tmb=25  - 75 W
Tstg Storage temperature  - -55 175
Tj Junction temperature  -  - 175

BUK563-80B Connection Diagram

BUK563-80B  Connection Diagram

BUK563-80B datasheet

BUK563-80B
PDF/DataSheet Download

  • Datasheet: BUK563-80B
  • File Size: 60387 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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