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BUK563-80B

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 80 V VDGR Drain-gate voltage RGS=20k - 80 V ±VGS Gate-source voltage - - 15 V ID Collector current (DC) Tmb=25 - 16 A ID Drain current (DC) Tmb=100 - 11 A ...

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BUK563-80B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 80 V VDGR Drain-gate voltage RGS=20k - 80 V ±VGS Gate-source voltage - - ...

BUK563-80B Data Sheet

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Part Number:
BUK563-80B
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage -  - 80 V
VDGR Drain-gate voltage  RGS=20k  - 80 V
±VGS Gate-source voltage  -  - 15 V
ID Collector current (DC)  Tmb=25  - 16 A
ID Drain current (DC)  Tmb=100  - 11 A
IDM Drain current (pulse peak value)  Tmb=25  - 64 A
Ptot Total power dissipation  Tmb=25  - 75 W
Tstg Storage temperature  - -55 175
Tj Junction temperature  -  - 175



Description

N-channel enhancement mode logic evel field-effect power transistor BUK563-80B in a plastic envelope suitable forsurface mount applications. The device is intended for use in automotive and general purpose switching applications.


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