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Part Number: BUK564-200A

 

MFG: PHIL

 

D/C: 05+

Description: N-channel enhancement mode logic evel field-effect power transistor in a plastic envelope suitable forsurface mount...


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BUK564-200A General Description


N-channel enhancement mode logic evel field-effect power transistor in a plastic envelope suitable forsurface mount applications. The device is intended for use in automotive and general purpose switching applications.

BUK564-200A Maximum Ratings

 SYMBOL  PARAMETER  CONDITIONS  MIN.  MAX.  UNIT
VDS  Drain-source voltage  -  -  200  V
 VDGR  Drain-gate voltage  RGS=20k  -  200  V
± VGS  Gate-source voltage  -  -  15  V
± VGSM Non-repetitive gate-source voltage  tp50s  -  20  V
 ID Drain vurrent (DC)  Tmb=25  -  9.2  A
 ID Drain vurrent (DC)  Tmb=100  -  6.5  A
 IDM  Drain vurrent (pulse peak value)  Tmb=25  -  36  A
 Ptot  Total power temperature  Tmb=25  -  90  W
 Tstg  Storage temperature  -  -55  175  
 Tj  Junction temperature  -  -  175  

BUK564-200A Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury.  Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

BUK564-200A Connection Diagram

BUK564-200A Connection Diagram

BUK564-200A datasheet

BUK564-200A
PDF/DataSheet Download

  • Datasheet: BUK564-200A
  • File Size: 75293 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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