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BUK564-60H

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS=20k - 60 V ±VGS Gate-source voltage - - 15 V ±VGSM Non-repetitive gate-source voltage tp50s - 20 V ID Drain vurrent (DC) Tmb=...

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BUK564-60H: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS=20k - 60 V ±VGS Gate-source voltage - - ...

BUK564-60H Data Sheet

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Part Number:
BUK564-60H
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

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Pinout

Connection Diagram


Specifications

 SYMBOL  PARAMETER  CONDITIONS  MIN.  MAX.  UNIT
VDS  Drain-source voltage  -  -  60  V
 VDGR  Drain-gate voltage  RGS=20k  -  60  V
± VGS  Gate-source voltage  -  -  15  V
± VGSM Non-repetitive gate-source voltage  tp50s  -  20  V
 ID Drain vurrent (DC)  Tmb=25  -  39  A
 ID Drain vurrent (DC)  Tmb=100  -  28  A
 IDM  Drain vurrent (pulse peak value)  Tmb=25  -  156  A
 Ptot  Total power temperature  Tmb=25  -  125  W
 Tstg  Storage temperature  -  -55  175  
 Tj  Junction temperature  -  -  175  



Description

N-channel enhancement mode logic evel field-effect power transistor BUK564-60H in a plastic envelope suitable forsurface mount applications. The device is intended for use in automotive and general purpose switching applications.


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