Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 100µA
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 450V
Package / Case: TO-220-3
Supplier Device Package: TO-220
Packaging: Tube
Manufacturer: STMicroelectronics
Power - Max: 70W
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Features: *HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR
*RELIABLE OPERATION VERY HIGH SWITCHING SPEED
Application*FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION.Specifications
| Symbol |
Parameter |
Value |
Unit |
| VCES |
Collector-Emitter Voltage (VBE= 0) |
1100 |
V |
| VCEO |
Collector-Emitter Voltage (IB= 0)
|
450 |
V |
| VEBO |
Emitter-Base Voltage (IC = 0) |
12 |
V |
| IC |
Collector Current |
4 |
A |
| ICM |
Collector Peak Current (tP<5 ms) |
8 |
A |
| IB |
Base Current |
2 |
A |
| IBM |
Base Peak Current (tP<5 ms) |
4 |
A |
| Ptot |
Total Dissipation at Tc = 25 |
70 |
W |
| Tstg |
Storage Temperature |
-65 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
DescriptionBUL1102E is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, BUL1102E has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
BUL1102E Data Sheet
