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MFG:ST  Package Cooled:TO-220  D/C:04+  

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Part Number: BUL1102E

 

MFG: ST

Package Cooled: TO-220

D/C: 04+

Description: The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high volt...


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BUL1102E General Description


The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.

BUL1102E Maximum Ratings

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 1100 V
VCEO Collector-Emitter Voltage (IB= 0)
 450 V
VEBO Emitter-Base Voltage (IC = 0) 12 V
IC Collector Current 4 A
ICM Collector Peak Current (tP<5 ms) 8 A
IB Base Current 2 A
IBM Base Peak Current (tP<5 ms) 4 A
Ptot Total Dissipation at Tc = 25 70 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150

BUL1102E Features

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS 
*MINIMUM LOT-TO-LOT SPREAD FOR
*RELIABLE OPERATION  VERY HIGH SWITCHING SPEED

BUL1102E Typical Application

*FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION.

BUL1102E datasheet

BUL1102E
PDF/DataSheet Download

  • Datasheet: BUL1102E
  • File Size: 214995 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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